RF JFET Transistors L&S Band GaAs HJFET
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| Package/Case | A |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 8V |
| Gain | 10dB |
| Gate to Source Voltage (Vgs) | -4V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 15W |
| Operating Frequency | 1.9 GHz |
| Polarity | N-CHANNEL |
| Technology | GAAS |
| RoHS | Not Compliant |
