The CEL NE6510179A-EVPW26 is an N-CHANNEL GaAs FET with a drain to source breakdown voltage of 8V and a continuous drain current of 2.8A. It operates at a maximum frequency of 1.9GHz and has a maximum power dissipation of 15W. The device is packaged in a type A package and is rated for operation up to 150°C. This FET is suitable for high-frequency applications.
Frequency1.9GHz
PackageA
PolarityN-CHANNEL
Power15W
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Technical Specifications
CEL NE6510179A-EVPW26 technical specifications.
General
| Package/Case | A |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Voltage (Vdss) | 8V |
| Frequency | 1.9GHz |
| Gain | 10dB |
| Gate to Source Voltage (Vgs) | -4V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 15W |
| P1dB | 35dBm |
| Polarity | N-CHANNEL |
| Power Dissipation | 15W |
| Technology | GAAS |
Compliance
| RoHS | Not Compliant |
Datasheet
CEL NE6510179A-EVPW26 Datasheet
Download the complete datasheet for CEL NE6510179A-EVPW26 to view detailed technical specifications.
No datasheet is available for this part.