The CEL NE651R479A-A is a GaAs FET with a maximum operating temperature of 125°C and a maximum power dissipation of 2.5W. It has a continuous drain current of 1A and a drain to source voltage of 8V. The device operates at a frequency of 1.9 GHz and has an output power of 30 dBm. It is packaged in a bulk quantity of 20 units per package.
Frequency1.9GHz
PackageA
Voltage Rating8V
PolarityN-CHANNEL
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Technical Specifications
CEL NE651R479A-A technical specifications.
General
| Package/Case | A |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 8V |
| Frequency | 1.9GHz |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | -4V |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 2.5W |
| Operating Frequency | 1.9 GHz |
| Output Power (dBm) | 30dBm |
| Package Quantity | 20 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Technology | GAAS |
| Test Voltage | 3.5V |
| Voltage Rating | 8V |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE651R479A-A Datasheet
Download the complete datasheet for CEL NE651R479A-A to view detailed technical specifications.
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