The NESG2101M05-T1 is a NPN transistor with a continuous collector current of 100mA and an emitter base voltage of 1.5V. It operates at frequencies up to 17GHz and can withstand temperatures between -65°C and 150°C. The device is packaged in quantities of 3000 on a tape and reel. It has a power dissipation of 130mW.
Frequency17GHz
PolarityNPN
Power130mW
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Technical Specifications
CEL NESG2101M05-T1 technical specifications.
General
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 17GHz |
| Max Frequency | 17GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 130mW |
Compliance
| RoHS | Not Compliant |
Datasheet
CEL NESG2101M05-T1 Datasheet
Download the complete datasheet for CEL NESG2101M05-T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.