The 2N2907A is a silicon PNP epitaxial planar transistor designed for general purpose amplifier and high-speed switching applications. It features a continuous collector current of 600mA and a collector-emitter voltage of 60V, housed in a hermetically sealed TO-18 metal case.
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| Collector-Emitter Voltage (VCEO) | 60V |
| Collector-Base Voltage (VCBO) | 60V |
| Emitter-Base Voltage (VEBO) | 5.0V |
| Continuous Collector Current (IC) | 600mA |
| Power Dissipation (PD) | 400mW |
| DC Current Gain (hFE) Min | 100 |
| Transition Frequency (fT) | 200MHz |
| Operating Temperature Range | -65 to +200°C |
| RoHS | Compliant |
| Pb-free | Yes |
