The CMPDM7002AG is a halogen-free, N-channel enhancement-mode MOSFET manufactured using a DMOS process. It is designed for high-speed pulsed amplifier and driver applications, featuring low on-resistance (RDS(ON)) and low drain-source voltage (VDS(ON)). This device is a specialized version of the 2N7002.
Temp Range-65 to +150°C
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Technical Specifications
Central Semiconductor CMPDM7002AG TR PBFREE technical specifications.
General
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 280mA |
| Drain-Source Resistance (Rds On) | 2.0Ohms |
| Gate-Source Voltage (Vgss) | 40V |
| Gate-Source Threshold Voltage (Vgs th) | 1.0 to 2.5V |
| Power Dissipation (Pd) | 350mW |
| Input Capacitance (Ciss) | 50pF |
| Operating Temperature Range | -65 to +150°C |
| Total Gate Charge (Qg) | 0.592nC |
Compliance
| RoHS | Yes |
| Halogen Free | Halogen Free by design |
| Lead Free | PbFree |
Datasheet
Central Semiconductor CMPDM7002AG TR PBFREE Datasheet
Download the complete datasheet for Central Semiconductor CMPDM7002AG TR PBFREE to view detailed technical specifications.
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