The CMPFJ176 is a P-Channel Silicon Junction Field Effect Transistor (JFET) designed for low level chopper and high-speed switching applications. It features a drain-source breakdown voltage of 30V and is packaged in a surface mount SOT-23 case, suitable for automated assembly. This device is typically used in analog switching and commutating circuits.
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Technical Specifications
Central Semiconductor CMPFJ176 TR technical specifications.
General
| Drain-Source Voltage (VDS) | 30V |
| Gate-Source Voltage (VGS) | 30V |
| Gate-Drain Voltage (VGD) | 30V |
| Gate Current (IG) | 50mA |
| Power Dissipation (PD) | 350mW |
| Drain-Source On-Resistance (rDS(on)) | 250Ω |
| Zero-Gate Voltage Drain Current (IDSS) Min | 2.0mA |
| Gate-Source Cutoff Voltage (VGS(off)) Min/Max | 1.0 / 4.0V |
| Input Capacitance (Ciss) Max | 11pF |
Compliance
| RoHS | Compliant |
| REACH | Compliant |
| Halogen Free | Yes |
Datasheet
Central Semiconductor CMPFJ176 TR Datasheet
Download the complete datasheet for Central Semiconductor CMPFJ176 TR to view detailed technical specifications.
No datasheet is available for this part.