This N-channel enhancement-mode MOSFET is rated for 60 V drain-to-source voltage and 144 A continuous drain current at 25°C case temperature. It provides low on-resistance of 4.0 mΩ at 10 V gate drive and 5.5 mΩ at 4.5 V, with up to 576 W pulsed current capability and 125 W power dissipation at 25°C case temperature. The device is specified for 240 mJ single-pulse avalanche energy, ±20 V gate-to-source voltage, and an operating and storage temperature range of -55°C to 150°C. The CEB series version is packaged in TO-263 (DD-PAK) and is marked RoHS compliant.
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CET-MOS CEB6036L technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 144A |
| Continuous Drain Current @ 100°C | 91A |
| Pulsed Drain Current | 576A |
| Power Dissipation | 125W |
| Power Derating | 1W/°C |
| Single Pulse Avalanche Current | 40A |
| Single Pulse Avalanche Energy | 240mJ |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Drain-Source On-Resistance @ VGS=10V | 4.0 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 5.5 maxmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 2640pF |
| Output Capacitance | 1035pF |
| Reverse Transfer Capacitance | 35pF |
| Turn-On Delay Time | 19ns |
| Turn-On Rise Time | 11ns |
| Turn-Off Delay Time | 80ns |
| Turn-Off Fall Time | 35ns |
| Total Gate Charge | 23nC |
| Gate-Source Charge | 6nC |
| Gate-Drain Charge | 9nC |
| Body Diode Forward Voltage | 1.2V |
| RoHS | Compliant |
