This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage. It supports 100 A continuous drain current at 25 °C case temperature and is specified with 6.2 mΩ maximum on-resistance at 10 V gate drive. The part is provided in the TO-263 package and is intended for high-current switching applications. It operates over a junction and storage temperature range of -55 °C to 175 °C and is marked RoHS compliant.
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CET-MOS CEB6056L technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Continuous Drain Current at 100°C | 71A |
| Pulsed Drain Current | 400A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 100W |
| On-Resistance | 6.2 max @ VGS=10VmΩ |
| On-Resistance | 9.0 max @ VGS=4.5VmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 3520pF |
| Output Capacitance | 360pF |
| Reverse Transfer Capacitance | 225pF |
| Total Gate Charge | 48nC |
| Single Pulse Avalanche Energy | 272.2mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| RoHS | Compliant |
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