This device is an N-channel enhancement mode field effect transistor in an SO-8 surface-mount package. It is rated for 60 V drain-source voltage and 14.5 A continuous drain current, with a pulsed drain current rating of 58 A. The MOSFET provides low on-resistance, specified at 7.8 mΩ maximum at 10 V gate drive and 10 mΩ maximum at 4.5 V gate drive. It has a junction and storage temperature range of -55 °C to 150 °C, a junction-to-ambient thermal resistance of 50 °C/W, and RoHS compliance.
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CET-MOS CEM6056L technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 14.5A |
| Pulsed Drain Current | 58A |
| Power Dissipation | 2.5W |
| Operating Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Ambient | 50°C/W |
| Gate Threshold Voltage | 1 to 3V |
| Drain-Source On-Resistance | 7.8 max @ VGS=10V, ID=8AmΩ |
| Drain-Source On-Resistance | 10 max @ VGS=4.5V, ID=4AmΩ |
| Input Capacitance | 3495 typpF |
| Output Capacitance | 360 typpF |
| Reverse Transfer Capacitance | 205 typpF |
| Turn-On Delay Time | 24 typns |
| Rise Time | 10 typns |
| Turn-Off Delay Time | 101 typns |
| Fall Time | 20 typns |
| Total Gate Charge | 47 typnC |
| Drain-Source Diode Forward Voltage | 1.2 maxV |
| RoHS | Compliant |
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