This device is an N-channel enhancement-mode power MOSFET in the CEP series TO-220 package. It is rated for 60 V drain-source voltage, 144 A continuous drain current at 25 °C case temperature, and 125 W power dissipation. Maximum on-resistance is 4.0 mΩ at 10 V gate drive and 5.5 mΩ at 4.5 V gate drive. The part supports avalanche operation up to 240 mJ, operates from -55 °C to 150 °C, and is specified as RoHS compliant.
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CET-MOS CEP6036L technical specifications.
| Transistor Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Continuous Drain Current @ Tc=25°C | 144A |
| Continuous Drain Current @ Tc=100°C | 91A |
| Pulsed Drain Current | 576A |
| Gate-Source Voltage | ±20V |
| Power Dissipation @ Tc=25°C | 125W |
| Drain-Source On-Resistance @ VGS=10V | 4.0 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 5.5 maxmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Single Pulsed Avalanche Energy | 240mJ |
| Single Pulsed Avalanche Current | 40A |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1°C/W |
| Input Capacitance | 2640pF |
| Output Capacitance | 1035pF |
| Reverse Transfer Capacitance | 35pF |
| Total Gate Charge | 23nC |
| RoHS | Compliant |
