This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 118 A continuous drain current at 25°C case temperature. It provides a maximum on-resistance of 5 mΩ at 10 V gate drive and uses a TO-220 package for the CEP variant. Typical dynamic characteristics include 6480 pF input capacitance and 123 nC total gate charge. The device supports 400 mJ single-pulse avalanche energy, operates from -55°C to 150°C, and is described as RoHS compliant.
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CET-MOS CEP6042 technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Tc=25°C) | 118A |
| Continuous Drain Current (Tc=100°C) | 75A |
| Pulsed Drain Current | 472A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 5 max @ VGS=10V, ID=30AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation | 139W |
| Input Capacitance | 6480 typpF |
| Output Capacitance | 450 typpF |
| Reverse Transfer Capacitance | 315 typpF |
| Total Gate Charge | 123 typnC |
| Gate-Source Charge | 25 typnC |
| Gate-Drain Charge | 31 typnC |
| Single Pulse Avalanche Energy | 400mJ |
| Single Pulse Avalanche Current | 40A |
| Thermal Resistance Junction-to-Case | 0.9°C/W |
| Operating and Storage Temperature Range | -55 to 150°C |
| Package Type | TO-220 |
| RoHS | Compliant |
