This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage. It supports 110 A continuous drain current at 25 °C case temperature and uses a TO-220 package. The on-resistance is specified at 5.0 mΩ with 10 V gate drive and 7.2 mΩ with 4.5 V gate drive. Total gate charge is 19 nC typ, and the device is rated for single-pulse avalanche energy of 80 mJ. Operating and storage junction temperature range is -55 °C to 175 °C, and the part is marked RoHS compliant.
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CET-MOS CEP6044L technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 110A |
| Continuous Drain Current at 100°C | 79A |
| Pulsed Drain Current | 440A |
| Power Dissipation | 100W |
| RDS(on) at VGS=10V | 5.0mΩ |
| RDS(on) max at VGS=4.5V | 7.2mΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 1890pF |
| Output Capacitance | 765pF |
| Reverse Transfer Capacitance | 95pF |
| Total Gate Charge | 19nC |
| Gate-Source Charge | 4.8nC |
| Gate-Drain Charge | 7.4nC |
| Single Pulse Avalanche Energy | 80mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Package | TO-220 |
| RoHS | Compliant |
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