This N-channel enhancement-mode power MOSFET is rated for 60 V drain-to-source voltage and 100 A continuous drain current. It provides a maximum drain-source on-resistance of 6.2 mΩ at a 10 V gate drive and supports pulsed drain current up to 360 A. The device dissipates up to 100 W at a 25 °C case temperature and operates over a -55 °C to 175 °C junction and storage temperature range. It is supplied in a TO-220 package for high-current switching and power conversion applications.
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CET-MOS CEP6056 technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Pulsed Drain Current | 360A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 6.2mΩ |
| Power Dissipation | 100W |
| Power Derating | 0.66W/°C |
| Single Pulsed Avalanche Energy | 80mJ |
| Single Pulsed Avalanche Current | 160A |
| Operating Junction Temperature | -55 to 175°C |
| Input Capacitance | 3215pF |
| Output Capacitance | 375pF |
| Reverse Transfer Capacitance | 215pF |
| Package | TO-220 |
| RoHS | Compliant |
| Lead Finish | Lead-free plating |
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