This N-channel enhancement-mode MOSFET is rated for 60 V drain-source voltage and 100 A continuous drain current at 25°C. It offers maximum on-resistance of 6.2 mΩ at 10 V gate drive and 9.0 mΩ at 4.5 V, with a pulsed drain current rating of 400 A. The device is supplied in a TO-220 package and supports power dissipation up to 100 W at a 25°C case temperature. The gate-source voltage rating is ±20 V, and the part is RoHS compliant.
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CET-MOS CEP6056L technical specifications.
| Channel Type | N-Channel |
| MOSFET Mode | Enhancement Mode |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Continuous Drain Current @ 100C | 71A |
| Pulsed Drain Current | 400A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 100W |
| Power Derating | 0.66W/°C |
| RDS(on) @ VGS=10V | 6.2mΩ |
| RDS(on) @ VGS=4.5V | 9.0mΩ |
| Package | TO-220 |
| RoHS | Compliant |
| RoHS | Compliant |
Download the complete datasheet for CET-MOS CEP6056L to view detailed technical specifications.
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