This device is an N-channel enhancement mode field effect transistor rated for 60 V drain-source voltage. It supports 118 A continuous drain current and 472 A pulsed drain current at 25 C case temperature. The datasheet specifies 4.0 mΩ maximum on-resistance at 10 V gate drive and 5.5 mΩ maximum at 4.5 V gate drive. It is offered in the CEU series TO-252 D-PAK package, with 83 W power dissipation, 240 mJ single-pulse avalanche energy, and a -55 C to 150 C operating and storage temperature range. The part is marked as RoHS compliant.
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CET-MOS CEU6036L technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 118A |
| Pulsed Drain Current | 472A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 83W |
| On-Resistance | 4.0 max @ VGS=10 V, ID=20 AmΩ |
| On-Resistance | 5.5 max @ VGS=4.5 V, ID=20 AmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Single Pulse Avalanche Energy | 240mJ |
| Single Pulse Avalanche Current | 40A |
| Operating Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Thermal Resistance Junction-to-Ambient | 50°C/W |
| Input Capacitance | 2640pF |
| Output Capacitance | 1035pF |
| Reverse Transfer Capacitance | 35pF |
| RoHS | Compliant |
| RoHS | Compliant |
