This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and 90 A continuous drain current. It is specified with a maximum drain-source on-resistance of 4.1 mΩ at a 10 V gate drive and is offered in the CEU series TO-252 D-PAK package. The datasheet lists 74 W power dissipation, 400 mJ single-pulse avalanche energy, and an operating and storage temperature range of -55 °C to 150 °C. Typical dynamic values include 6480 pF input capacitance and 123 nC total gate charge, and the device is described as lead-free and RoHS compliant.
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CET-MOS CEU6042 technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 90A |
| Pulsed Drain Current | 360A |
| Power Dissipation | 74W |
| Single Pulse Avalanche Energy | 400mJ |
| Single Pulse Avalanche Current | 40A |
| Operating and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.7°C/W |
| Thermal Resistance Junction-to-Ambient | 50°C/W |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-Resistance | 4.1 maxmΩ |
| Input Capacitance | 6480pF |
| Output Capacitance | 450pF |
| Reverse Transfer Capacitance | 315pF |
| Turn-On Delay Time | 36ns |
| Rise Time | 33ns |
| Turn-Off Delay Time | 71ns |
| Fall Time | 38ns |
| Total Gate Charge | 123nC |
| Gate-Source Charge | 25nC |
| Gate-Drain Charge | 31nC |
| Body Diode Forward Current | 60A |
| Body Diode Forward Voltage | 1.2V |
| RoHS | Compliant |
