This device is an N-channel enhancement mode power MOSFET in a TO-252 package. It is rated for 60 V drain-to-source voltage, 85 A continuous drain current, and 340 A pulsed drain current. The datasheet specifies a maximum on-resistance of 5.2 mΩ at 10 V gate drive and 7.5 mΩ at 4.5 V gate drive. It supports junction temperatures from -55 to 175 °C, is RoHS compliant, and has a maximum power dissipation of 68 W at case temperature of 25 °C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the CET-MOS CEU6044L datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
CET-MOS CEU6044L technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 85A |
| Pulsed Drain Current | 340A |
| Power Dissipation | 68W |
| Gate-Source Voltage | ±20V |
| On-Resistance @ VGS=10V | 5.2mΩ |
| On-Resistance @ VGS=4.5V | 7.5mΩ |
| Gate Threshold Voltage Min | 1V |
| Gate Threshold Voltage Max | 3V |
| Input Capacitance | 1890pF |
| Output Capacitance | 765pF |
| Reverse Transfer Capacitance | 104pF |
| Total Gate Charge | 19nC |
| Gate-Source Charge | 4.8nC |
| Gate-Drain Charge | 7.4nC |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 2.2°C/W |
| RoHS | Compliant |
Download the complete datasheet for CET-MOS CEU6044L to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
