This device is an N-channel enhancement mode field effect transistor rated for 60 V and 76 A. It is specified with 6.2 mΩ on-resistance at VGS = 10 V and is offered for TO-251 and TO-252 package footprints. The design uses a high-density cell structure for low on-resistance and is identified as a lead-free product.
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CET-MOS CEU6056 technical specifications.
| Polarity | N |
| Channel Type | N-Channel |
| Operating Mode | Enhancement |
| Device Type | Field Effect Transistor |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 76A |
| On-Resistance RDS(on) | 6.2mΩ |
| Gate-Source Voltage for RDS(on) | 10V |
| Package Option 1 | TO-251 |
| Package Option 2 | TO-252 |
| Lead Free | Yes |
