This device is an N-channel enhancement mode power MOSFET in the CEU series. It is rated for 60 V drain-source voltage, 78 A continuous drain current, and 312 A pulsed drain current, with maximum on-resistance of 6.2 mΩ at 10 V gate drive and 9.0 mΩ at 4.5 V gate drive. The part is supplied in a TO-252 package and supports up to 62.5 W power dissipation at 25 °C case temperature. Its junction temperature range is -55 °C to 150 °C, and the datasheet marks it as RoHS compliant.
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CET-MOS CEU6056L technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 78A |
| Pulsed Drain Current | 312A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 62.5W |
| On-Resistance @ VGS=10V, ID=20A | 6.2 maxmΩ |
| On-Resistance @ VGS=4.5V, ID=15A | 9.0 maxmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 3520 typpF |
| Output Capacitance | 360 typpF |
| Reverse Transfer Capacitance | 225 typpF |
| Total Gate Charge | 48 typnC |
| Gate-Source Charge | 10 typnC |
| Gate-Drain Charge | 30 typnC |
| Body Diode Forward Voltage | 1.2V |
| Thermal Resistance Junction-to-Case | 2.0°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| RoHS | Compliant |
