N-channel silicon power MOSFET rated for 30 V drain-source voltage and 255 A continuous drain current. The device provides up to 1.0 mΩ maximum drain-source on-resistance at VGS = 10 V, 98 W power dissipation, and 64 nC typical total gate charge. It is supplied in a PPAK5x6 surface-mount package with MSL 3 and a junction temperature range of -55 °C to +150 °C. RoHS compliant construction and high current capability support battery management, DC/DC converter, and high-side or low-side switching applications.
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| Channel Type | N-channel enhancement mode |
| Technology | Silicon MOSFET |
| Mounting Type | Surface mount |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC) | 255A |
| Continuous Drain Current (TA) | 65A |
| Pulsed Drain Current (TC) | 1020A |
| Power Dissipation | 98W |
| Gate Threshold Voltage | 1 to 2V |
| Drain-Source On-Resistance @ VGS=10V | 1 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 1.4 maxmΩ |
| Input Capacitance | 3660pF |
| Output Capacitance | 910pF |
| Reverse Transfer Capacitance | 410pF |
| Total Gate Charge | 64nC |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.28°C/W |
| Avalanche Energy | 375mJ |
| MSL | 3 |
| RoHS | Compliant |
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