This N-channel enhancement-mode MOSFET is rated for 60 V drain-source voltage and up to 110 A continuous drain current at junction-to-case thermal conditions. It is housed in a P-PAK 5x6 surface-mount package and specifies low on-resistance of 3.3 mΩ typical at 10 V gate drive and 4.3 mΩ typical at 4.5 V gate drive. The device supports 78 W power dissipation, 440 A pulsed drain current, and operation from -55 °C to 150 °C. The datasheet also lists 23 nC typical total gate charge, 2640 pF typical input capacitance, and RoHS compliance.
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CET-MOS CEZ6R36L technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @RθJC | 110A |
| Continuous Drain Current @RθJA | 31A |
| Pulsed Drain Current @RθJC | 440A |
| Pulsed Drain Current @RθJA | 124A |
| Power Dissipation | 78W |
| Avalanche Current | 40A |
| Avalanche Energy | 240mJ |
| Gate Threshold Voltage | 1 to 3V |
| RDS(on) Typ @VGS=10V, ID=20A | 3.3mΩ |
| RDS(on) Max @VGS=10V, ID=20A | 4.0mΩ |
| RDS(on) Typ @VGS=4.5V, ID=20A | 4.3mΩ |
| RDS(on) Max @VGS=4.5V, ID=20A | 5.5mΩ |
| Input Capacitance | 2640pF |
| Output Capacitance | 1035pF |
| Reverse Transfer Capacitance | 35pF |
| Total Gate Charge | 23nC |
| Gate-Source Charge | 6nC |
| Gate-Drain Charge | 9nC |
| Turn-On Delay Time | 19ns |
| Rise Time | 11ns |
| Turn-Off Delay Time | 80ns |
| Fall Time | 35ns |
| Body Diode Forward Current | 65A |
| Body Diode Forward Voltage | 1.2V |
| Operating and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.6°C/W |
| Thermal Resistance Junction-to-Ambient | 20°C/W |
| RoHS | Compliant |
