This device is an N-channel enhancement-mode field-effect transistor rated for 60 V drain-source voltage and 87 A drain current. The datasheet specifies 5.5 mΩ maximum on-resistance at a 10 V gate drive. It uses a surface-mount package for high-current switching applications. The device uses lead-free plating and is identified as RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the CET-MOS CEZ6R46 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
CET-MOS CEZ6R46 technical specifications.
| Transistor Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Drain Current | 87A |
| On-Resistance | 5.5mΩ |
| On-Resistance Test Gate Voltage | 10V |
| Mounting | Surface Mount |
| Plating | Lead-Free |
| RoHS | Compliant |
| RoHS | Compliant |
| Lead-free | Yes |
Download the complete datasheet for CET-MOS CEZ6R46 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
