This device is an N-channel enhancement-mode MOSFET in a surface-mount P-PAK 5x6 package. It is rated for 60 V drain-source voltage and supports up to 90 A continuous drain current at junction-to-case conditions. The datasheet specifies low on-resistance of 5.3 mΩ maximum at 10 V gate drive and 7.5 mΩ maximum at 4.5 V gate drive. It operates over a junction and storage temperature range of -55 °C to 150 °C and is marked as RoHS compliant. Typical dynamic characteristics include 17 nC total gate charge and 2275 pF input capacitance.
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CET-MOS CEZ6R56L technical specifications.
| Channel Type | N-Channel |
| Mode | Enhancement |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 90 @ RθJCA |
| Continuous Drain Current | 15 @ RθJAA |
| Pulsed Drain Current | 360 @ RθJCA |
| Pulsed Drain Current | 60 @ RθJAA |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 83.3W |
| Drain-Source On-Resistance | 4.1 typ, 5.3 max @ VGS=10V, ID=20AmΩ |
| Drain-Source On-Resistance | 5.6 typ, 7.5 max @ VGS=4.5V, ID=20AmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 2275pF |
| Output Capacitance | 795pF |
| Reverse Transfer Capacitance | 35pF |
| Turn-On Delay Time | 12ns |
| Rise Time | 6ns |
| Turn-Off Delay Time | 33ns |
| Fall Time | 9ns |
| Total Gate Charge | 17nC |
| Gate-Source Charge | 4nC |
| Gate-Drain Charge | 6nC |
| Drain-Source Diode Forward Current | 69A |
| Drain-Source Diode Forward Voltage | 1.2V |
| Single Pulsed Avalanche Current | 20A |
| Single Pulsed Avalanche Energy | 80mJ |
| Operating and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Thermal Resistance Junction-to-Ambient | 20°C/W |
| RoHS | Compliant |
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