This N-channel enhancement mode MOSFET is rated for 60 V drain-source voltage and supports up to 42 A continuous drain current with 9 mΩ maximum on-resistance at 10 V gate drive. It also specifies 13 mΩ maximum on-resistance at 4.5 V and a total gate charge of 9 nC for efficient switching. The device is supplied in a P-PAK 5x6 surface-mount package and is intended for motor driver and DC fan applications. It is RoHS compliant and specified for operating and storage temperatures from -55 °C to 150 °C.
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CET-MOS CEZ6R68 technical specifications.
| Transistor Type | N-Channel Enhancement Mode Field Effect Transistor |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (RθJC) | 42A |
| Continuous Drain Current (RθJA) | 13A |
| Pulsed Drain Current (RθJC) | 168A |
| Pulsed Drain Current (RθJA) | 52A |
| Power Dissipation | 32.8W |
| Single Pulse Avalanche Current | 20A |
| Single Pulse Avalanche Energy | 60mJ |
| On-Resistance @ VGS=10V, ID=13A | 9 maxmΩ |
| On-Resistance @ VGS=4.5V, ID=10A | 13 maxmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 1170pF |
| Output Capacitance | 430pF |
| Reverse Transfer Capacitance | 10pF |
| Total Gate Charge | 9nC |
| Operating and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance, Junction-to-Case | 3.8°C/W |
| Thermal Resistance, Junction-to-Ambient | 40°C/W |
| RoHS | Compliant |
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