This device is a 600 V SJMOS N-channel power MOSFET rated for 40 A continuous drain current at 25°C. It uses super-junction technology and specifies a typical drain-source on-resistance of 63 mΩ. The part is offered in a TO-247-3L package with a ±30 V gate-source rating, 277 W power dissipation at 25°C case temperature, and a -55°C to 150°C junction and storage temperature range. It is intended for power supplies, chargers, lighting, and solar or micro-inverter applications.
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China Resource Microelectronics CRJQ69N60G2 technical specifications.
| Transistor Type | N-Channel Super Junction MOSFET |
| Drain-Source Voltage | 600V |
| Continuous Drain Current (Tc=25°C) | 40A |
| Continuous Drain Current (Tc=100°C) | 25A |
| Pulsed Drain Current | 160A |
| On-Resistance RDS(on) Typ | 63mΩ |
| Gate-Source Voltage | ±30V |
| Power Dissipation (Tc=25°C) | 277W |
| Single Pulse Avalanche Energy | 520mJ |
| MOSFET dv/dt Ruggedness | 50V/ns |
| Operating Junction and Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.32°C/W |
| Total Gate Charge | 35nC |
| Input Capacitance | 2520pF |
| Output Capacitance | 177pF |
| Reverse Transfer Capacitance | 18pF |
| Body Diode Reverse Recovery Time | 396ns |
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