This device is an N-channel trench MOSFET in a TO-220 package from CR Micro's 12 V to 300 V NMOS family. It is rated for 60 V drain-source voltage and 123 A drain current. Drain-source on-resistance is 4.2 mΩ typical and 5.6 mΩ maximum at a 10 V gate drive. The gate threshold voltage range is 2.4 V to 3.6 V. Typical total gate charge is 77 nC and typical input capacitance is 3135 pF.
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China Resource Microelectronics CRTT056N06N technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 123A |
| On-Resistance @ VGS=10V Typ | 4.2mΩ |
| On-Resistance @ VGS=10V Max | 5.6mΩ |
| Gate Threshold Voltage Min | 2.4V |
| Gate Threshold Voltage Max | 3.6V |
| Total Gate Charge Typ | 77nC |
| Input Capacitance Typ | 3135pF |
| Package | TO-220 |
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