This silicon N-channel enhanced VDMOS power MOSFET is rated for 60 V drain-to-source voltage and 110 A continuous drain current at 25°C case temperature. It uses trench technology to reduce conduction loss and improve switching performance, and it is intended for load-switch and PWM power-switching applications. The device is housed in a TO-220AB package and has a typical drain-to-source on-resistance of 6 mΩ at 10 V gate drive. Typical total gate charge is 100 nC, typical input capacitance is 4662 pF, and single-pulse avalanche energy is rated at 505 mJ. The operating junction and storage temperature range extends from -55°C to 150°C.
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China Resource Microelectronics CS110N06A8 technical specifications.
| Drain-to-Source Voltage | 60V |
| Continuous Drain Current | 110 @ Tc=25°CA |
| Continuous Drain Current | 66.8 @ Tc=100°CA |
| Pulsed Drain Current | 440A |
| Gate-to-Source Voltage | ±20V |
| Avalanche Energy | 505mJ |
| Power Dissipation | 135.8W |
| Drain-to-Source On-Resistance | 6 typ @ VGS=10V, ID=30AmΩ |
| Drain-to-Source On-Resistance | 8 max @ VGS=10V, ID=30AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 100 typnC |
| Input Capacitance | 4662 typpF |
| Output Capacitance | 417 typpF |
| Reverse Transfer Capacitance | 386 typpF |
| Turn-on Delay Time | 29 typns |
| Rise Time | 18 typns |
| Turn-off Delay Time | 83 typns |
| Fall Time | 23 typns |
| Body Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Time | 38 typns |
| Thermal Resistance Junction-to-Case | 0.92°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
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