N-channel enhanced trench VDMOS power MOSFET supports an 85 V drain-to-source rating with 120 A package-limited continuous drain current at 25 °C. The device has 4.8 mΩ typical and 6 mΩ maximum on-resistance at 10 V gate drive and 70 A drain current. It is rated for 208 W power dissipation, ±20 V gate-to-source voltage, 480 A pulsed drain current, and 696 mJ single-pulse avalanche energy. Operation is specified over a -55 °C to 150 °C junction and storage temperature range in a TO-262 package. The package is specified as RoHS compliant with the stated material exemption conditions.
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| Transistor Type | N-channel enhanced trench VDMOS power MOSFET |
| Drain-to-Source Voltage | 85V |
| Continuous Drain Current, Silicon Limited at 25 °C | 140A |
| Continuous Drain Current, Package Limited at 25 °C | 120A |
| Continuous Drain Current at 100 °C | 88A |
| Pulsed Drain Current | 480A |
| Gate-to-Source Voltage | ±20V |
| Single Pulse Avalanche Energy | 696mJ |
| Power Dissipation at 25 °C | 208W |
| Power Derating Above 25 °C | 1.66W/°C |
| Operating Junction Temperature | 150 maximum°C |
| Storage Temperature Range | -55 to 150°C |
| Drain-to-Source On-Resistance | 4.8 typical, 6 maximum at VGS=10 V, ID=70 AmΩ |
| Gate Threshold Voltage | 2.0 minimum, 4.0 maximumV |
| Input Capacitance | 4949 typicalpF |
| Output Capacitance | 558 typicalpF |
| Reverse Transfer Capacitance | 291 typicalpF |
| Total Gate Charge | 87.5 typicalnC |
| Junction-to-Case Thermal Resistance | 0.6 maximum°C/W |
| Junction-to-Ambient Thermal Resistance | 62.5 maximum°C/W |
| RoHS | Package accords with RoHS standard; solder lead noted within allowed range/exemption of 2011/65/EU |
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