HGE055NE4A

This silicon N-channel enhanced VDMOS power MOSFET is rated for 45 V drain-to-source voltage and 18 A continuous drain current in an SOP-8 package. It uses high-density trench technology to reduce conduction loss and improve switching performance, with typical on-resistance of 5.2 mΩ at 10 V gate drive and 8.0 mΩ at 4.5 V. The device has 24 nC typical total gate charge, 1156 pF typical input capacitance, and a 3.1 W power dissipation rating at 25 °C ambient. It is intended for adaptor and charger power switching and synchronous rectification in DC/DC converters, and the package is stated to accord with RoHS requirements.