HGE090N06A

This silicon N-channel enhanced VDMOSFET uses high-density trench technology to reduce conduction loss and improve switching performance. It is rated for 60 V drain-to-source voltage, 14 A continuous drain current at 25 °C, and 3.1 W power dissipation. Typical on-resistance is 8.5 mΩ at VGS = 10 V and 11 mΩ at VGS = 4.5 V, with 18 nC total gate charge and 1226 pF input capacitance. The device is supplied in an SOP-8 package, supports single-pulse avalanche energy to 145 mJ, operates to 150 °C junction temperature, and is intended for adapter, charger, and DC/DC synchronous rectification circuits.