High-performance RF power field-effect transistor designed for demanding applications. Delivers exceptional power output and efficiency across a wide frequency range. Features advanced GaN-on-SiC technology for superior thermal management and reliability. Optimized for high-frequency power amplification in wireless infrastructure and radar systems.
Quick Jump:
Technical Specifications
Cree CGHV27030S technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Cree CGHV27030S Datasheet
Download the complete datasheet for Cree CGHV27030S to view detailed technical specifications.
No datasheet is available for this part.