N-channel Silicon Carbide Power MOSFET, 1200V drain-source breakdown voltage, 24A continuous drain current, and 160mΩ drain-source resistance. Features a TO-247 package for through-hole mounting, with a maximum power dissipation of 134W. Operates from -55°C to 125°C, with a nominal gate-source voltage of 2.5V and a threshold voltage of 2.5V. Includes fast switching characteristics with a fall time of 21ns and turn-off delay of 38ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power152W
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Technical Specifications
Cree CMF10120D technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 21.1mm |
| Input Capacitance | 928pF |
| Length | 16.13mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 134W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 152W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | Z-FET™ |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8.8ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Cree CMF10120D Datasheet
Download the complete datasheet for Cree CMF10120D to view detailed technical specifications.
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