N-channel Silicon Carbide (SiC) Power MOSFET, 1200V drain-to-source breakdown voltage, 33A continuous drain current. Features 80mΩ drain-to-source resistance, 215W maximum power dissipation, and TO-247 package for through-hole mounting. Operates across a -55°C to 135°C temperature range with a nominal gate-to-source voltage of 2.5V. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 24ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Cree CMF20120D technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 21.1mm |
| Input Capacitance | 1.915nF |
| Length | 16.13mm |
| Max Operating Temperature | 135°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | Z-FET™ |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 13ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Cree CMF20120D Datasheet
Download the complete datasheet for Cree CMF20120D to view detailed technical specifications.
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