N-channel Silicon Carbide (SiC) Power MOSFET, 1200V drain-to-source breakdown voltage, 33A continuous drain current. Features 80mΩ drain-to-source resistance, 215W maximum power dissipation, and TO-247 package for through-hole mounting. Operates across a -55°C to 135°C temperature range with a nominal gate-to-source voltage of 2.5V. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 24ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Cree CMF20120D technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
33A
Drain to Source Breakdown Voltage
1.2kV
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
1.2kV
Fall Time
24ns
Gate to Source Voltage (Vgs)
25V
Height
21.1mm
Input Capacitance
1.915nF
Length
16.13mm
Max Operating Temperature
135°C
Min Operating Temperature
-55°C
Max Power Dissipation
215W
Mount
Through Hole
Nominal Vgs
2.5V
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
110mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
Z-FET™
Threshold Voltage
2.5V
Turn-Off Delay Time
40ns
Turn-On Delay Time
13ns
Width
5.21mm
Compliance
RoHS
Compliant
Datasheet
Cree CMF20120D Datasheet
Download the complete datasheet for Cree CMF20120D to view detailed technical specifications.
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