This silicon rectifier diode is part of the 1N4001 through 1N4007 general-purpose rectifier family and is rated for 1.0 A average forward rectified current. The 1N4001 version is specified for 50 V maximum recurrent peak reverse voltage and 30 A peak forward surge current on an 8.3 ms single half-sine wave. Maximum instantaneous forward voltage is 1.1 V at 1.0 A DC, and the operating and storage temperature range is -55 to +150 C. The device uses a DO-41 molded plastic package with UL 94V-0 epoxy, color-band cathode marking, and approximately 0.25 g weight.
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DC Components 1N4001 technical specifications.
| RoHS Compliant | No |
| RoHS | Not Compliant |
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