
N-channel and P-channel MOSFET with 20V drain-source breakdown voltage. Features 4.4A continuous drain current and 6A current rating. Offers low on-resistance of 35mΩ at 10Vgs. Packaged in an 8-TSSOP surface-mount configuration, this component operates from -55°C to 150°C.
Onsemi FDW2520C technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.4A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.325nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDW2520C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
