BFU730LX
NXP Semiconductors
The test circuit shown in this document is a broadband LNA using the BFU730LX
Application NoteNxp
AN11339: Maximum RF Input Power Stress Test for BFU730LX
This application note evaluates the hFE degradation of the BFU730LX LNA transistor under high RF input power stress for WLAN applications.
Overview
This document details a 1000-hour stress test of the NXP BFU730LX bipolar transistor in a broadband LNA configuration. The test evaluates DC current gain (hFE) degradation when exposed to a +10dBm CW signal at 5.5 GHz. Results show a 7.2% hFE reduction, which is within the 10% failure threshold. The note recommends operating at a collector-emitter voltage (Vce) of 2.5V or lower to mitigate mixed-mode degradation and improve ruggedness against large RF signals in WiFi/WLAN environments where RF isolation between the PA and LNA is limited.
Use Cases
- Designing WLAN receiver LNAs
- Managing RF isolation between transmitter PA and receiver LNA
- Evaluating LNA transistor reliability
- Optimizing collector-emitter voltage for RF ruggedness
Topics
BFU730LX
LNA
WiFi
WLAN
RF Input Power
hFE degradation
NXP Semiconductors
bipolar transistor
stress test
Referenced Parts
BFU730LX
Maxim
Fig 1. BFU730LX maximum RF input power test circuit
BFU730LX
Maxim
Fig 1. BFU730LX maximum RF input power test circuit +10dBm @ 5.5 GHz
| BFU730LX | NXP Semiconductors | The test circuit shown in this document is a broadband LNA using the BFU730LX |
| BFU730LX | Maxim | Fig 1. BFU730LX maximum RF input power test circuit |
| BFU730LX | Maxim | Fig 1. BFU730LX maximum RF input power test circuit +10dBm @ 5.5 GHz |