FTS-106-02-F-DV
Samtec Inc.
Connector Header Surface Mount 12 position 0.050" (1.27mm) (Samtec Inc., P/N: FTS-106-02-F-DV).
Design DocumentInfineon
GS-EVB-IMS3 Evaluation Platform Technical Manual for GaN E-mode Transistors
Technical manual for the IMS3 evaluation platform featuring GS66516B and GS66508B 650V GaN E-mode transistors for high-power applications up to 6kW.
Overview
This technical manual provides specifications and design details for the Infineon GS-EVB-IMS3 evaluation platform, developed to evaluate bottom-side cooled GaNPX E-mode transistors in high-power environments. The platform includes two specific daughter power board configurations: the 3kW GS-EVB-IMS3-66508B-GS and the 6kW GS-EVB-IMS3-66516B-GS. The document details the horizontal Insulated Metal Substrate (IMS3) design which achieves high thermal conductivity of 7.0 W/mK. It provides comprehensive technical data including thermal resistance comparisons, compatible driver motherboard options, double pulse test results, boost configuration performance, and full schematics with a bill of materials.
Use Cases
- Automotive On-Board Chargers
- DC/DC Converters
- Photovoltaic Inverters
- Industrial Motor Drives
- Server and Datacenter ACDC Power Supplies
- Residential Energy Storage Systems
Topics
Infineon
GaN Systems
GS66516B
GS66508B
GS-065-060-3-B
IMS3
Evaluation Board
GaN E-mode
Half Bridge
Insulated Metal Substrate
GaNPX
650V
Referenced Parts
GS-065-060-3-B
GaN Systems
The IMS3 half-bridge daughter power board is populated with GaN Systems’ GS-065-060-3-B (bottom-side cooled GaN E-mode transistor, rated at 650 V / 25 mΩ)
GS66508B
GaN Systems
3kW GS-EVB-IMS3-66508B-GS: Q1/Q2 GS66508B.
GS66516B
GaN Systems
6kW GS-EVB-IMS3-66516B-GS: Q1/Q2 GS66516B.
| FTS-106-02-F-DV | Samtec Inc. | Connector Header Surface Mount 12 position 0.050" (1.27mm) (Samtec Inc., P/N: FTS-106-02-F-DV). |
| GS-065-060-3-B | GaN Systems | The IMS3 half-bridge daughter power board is populated with GaN Systems’ GS-065-060-3-B (bottom-side cooled GaN E-mode transistor, rated at 650 V / 25 mΩ) |
| GS66508B | GaN Systems | 3kW GS-EVB-IMS3-66508B-GS: Q1/Q2 GS66508B. |
| GS66516B | GaN Systems | 6kW GS-EVB-IMS3-66516B-GS: Q1/Q2 GS66516B. |