NPN silicon bipolar junction transistor for surface mount applications. Features a 65V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 100MHz transition frequency and offers a minimum hFE of 110. Packaged in a compact SOT-363 plastic case with tin-matte plating, this RoHS compliant component is supplied on tape and reel.
Frequency100MHz
PackageSOT-363
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC846AS-7 technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
110
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC846AS-7 Datasheet
Download the complete datasheet for Diodes BC846AS-7 to view detailed technical specifications.
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