NPN bipolar junction transistor in a SOT-23 package, featuring a 45V collector-emitter breakdown voltage and 800mA continuous collector current. This silicon transistor offers a 100MHz transition frequency and a maximum power dissipation of 330mW. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageSOT-23
Current Rating800mA
MountingSurface Mount
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Technical Specifications
Diodes BCW66HTA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Continuous Collector Current
800mA
Current Rating
800mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
45V
Max Collector Current
800mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
330mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
45V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCW66HTA Datasheet
Download the complete datasheet for Diodes BCW66HTA to view detailed technical specifications.
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