BS170

The device is an N-channel enhancement mode transistor in a TO-92 plastic package. It is rated for 60 V drain-source voltage, 300 mA continuous drain current, and ±20 V gate-source voltage. The datasheet specifies up to 830 mW power dissipation at 25°C case temperature and an operating and storage temperature range of -55°C to +150°C. It is described as having high input impedance, fast switching speed, and CMOS logic compatible input. The intrinsic diode is rated for 0.50 A continuous forward current with a typical forward voltage drop of 0.85 V at 0.5 A.