This N-channel enhancement mode MOSFET is rated for 60 V drain-source voltage and up to 95 A continuous drain current at 25°C. It is designed for low on-resistance and switching loss, with maximum RDS(on) of 7.3 mΩ at 10 V gate drive and 15 mΩ at 4.5 V. The device is offered in a PowerDI5060-8 package with a low profile below 1.1 mm and a junction operating temperature range from -55°C to +175°C. It is intended for power-management functions, DC-DC converters, and backlighting applications. The device has a lead-free finish, is RoHS compliant, and is specified as a halogen- and antimony-free green device.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMNH6009SPS datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMNH6009SPS technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @ TC=25°C | 95A |
| Continuous Drain Current @ TC=100°C | 67A |
| Pulsed Drain Current | 380A |
| Drain-Source On-Resistance Max @ VGS=10V | 7.3mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 15mΩ |
| Gate Threshold Voltage Max | 3V |
| Input Capacitance | 1882pF |
| Output Capacitance | 374pF |
| Reverse Transfer Capacitance | 111pF |
| Total Gate Charge @ VGS=4.5V | 18.5nC |
| Total Gate Charge @ VGS=10V | 37.3nC |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Operating and Storage Temperature Range | -55 to +175°C |
| Body Diode Reverse-Recovery Time | 32ns |
| Body Diode Reverse-Recovery Charge | 30nC |
| RoHS | Compliant (RoHS 3 2015/863/EU) |
| Halogen And Antimony Free | Green Device |
Download the complete datasheet for Diodes DMNH6009SPS to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
