P-Channel Power MOSFET, 100V Vdss, 9A continuous drain current, and 240mΩ Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-252-3 surface mount package, offering a maximum power dissipation of 42W and operating temperature range of -55°C to 150°C. Designed for efficient switching, it exhibits a turn-on delay of 9.1ns and a fall time of 34.4ns. The component is lead-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP10H400SK3-13 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 34.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.239nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 240mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 57.4ns |
| Turn-On Delay Time | 9.1ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMP10H400SK3-13 Datasheet
Download the complete datasheet for Diodes DMP10H400SK3-13 to view detailed technical specifications.
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