N-channel enhancement mode MOSFET rated for 30 V drain-source voltage in a PowerDI5060-8 package. Continuous drain current is 100 A and pulsed drain current is 400 A, with maximum RDS(on) of 1.0 mΩ at 10 V gate drive and 1.6 mΩ at 4.5 V. The device supports high-efficiency power management, DC-DC conversion, synchronous rectification, engine management systems, and body control electronics. Operating junction temperature ranges from -55 to +150 °C. Lead-free finish, RoHS compliance, and halogen- and antimony-free green status are stated for the device.
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| Channel Type | N-Channel |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 100A |
| Pulsed Drain Current | 400A |
| Drain-Source On-Resistance Max @ VGS=10V | 1.0mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 1.6mΩ |
| Gate Threshold Voltage Max | 3V |
| Input Capacitance Typ | 12121pF |
| Total Gate Charge Typ @ VGS=10V | 160.5nC |
| Total Gate Charge Typ @ VGS=4.5V | 71.3nC |
| Power Dissipation @ TA=25°C | 2.6W |
| Thermal Resistance Junction-to-Ambient | 48°C/W |
| Thermal Resistance Junction-to-Case | 1.1°C/W |
| Avalanche Energy | 460mJ |
| Operating Junction Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Lead-free Finish | Yes |
| Green | Halogen and Antimony Free |
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