This 60 V N-channel enhancement-mode MOSFET is designed for low on-state resistance and efficient switching in power management circuits. It supports 88 A continuous drain current at case temperature of 25°C, with maximum RDS(ON) of 6.5 mΩ at 10 V gate drive and 10 mΩ at 4.5 V. The device is supplied in a TO252 (DPAK) package and is intended for power management functions, DC-DC converters, and backlighting. It operates over a junction and storage temperature range of -55°C to +150°C and is specified as lead-free, RoHS compliant, and halogen- and antimony-free.
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Diodes DMT6006LK3 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @ TC=25°C | 88A |
| Continuous Drain Current @ TC=70°C | 71A |
| Pulsed Drain Current | 350A |
| Power Dissipation @ TA=25°C | 3.1W |
| Power Dissipation @ TC=25°C | 89.3W |
| Drain-Source On-Resistance Max @ VGS=10V | 6.5mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 10mΩ |
| Gate Threshold Voltage Max | 2.5V |
| Total Gate Charge Typ @ VGS=4.5V | 18.1nC |
| Total Gate Charge Typ @ VGS=10V | 34.9nC |
| Input Capacitance Typ | 2162pF |
| Output Capacitance Typ | 761pF |
| Reverse Transfer Capacitance Typ | 58pF |
| Reverse Recovery Time Typ | 35.8ns |
| Reverse Recovery Charge Typ | 40.2nC |
| Operating Temperature Range | -55 to +150°C |
| Package | TO252 (DPAK) |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
| Antimony Free | Yes |
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