This 60 V N-channel enhancement-mode MOSFET is intended for high-efficiency power management applications including high-frequency switching, synchronous rectification, and DC-DC converters. It supports 10.6 A continuous drain current at 25 °C and offers a maximum drain-source on-resistance of 11 mΩ at 10 V gate drive or 14.5 mΩ at 4.5 V gate drive. The device is supplied in an SO-8 package with ESD-protected gate structure and is rated for operation from -55 °C to +150 °C junction temperature. The datasheet lists low input capacitance, fast switching performance, 100% UIS production test coverage, and matte-tin lead finish on a green molding compound.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMT6011LSS datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMT6011LSS technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 10.6A |
| Continuous Drain Current at 70°C | 8.5A |
| RDS(ON) Max at VGS=10V | 11mΩ |
| RDS(ON) Max at VGS=4.5V | 14.5mΩ |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 1.4 to 2.5V |
| Pulsed Drain Current | 85A |
| Avalanche Current | 16.2A |
| Avalanche Energy | 39.4mJ |
| Input Capacitance | 1072pF |
| Output Capacitance | 382pF |
| Reverse Transfer Capacitance | 38pF |
| Total Gate Charge at VGS=10V | 22.2nC |
| Total Gate Charge at VGS=4.5V | 11.8nC |
| Thermal Resistance Junction-to-Case | 7.7°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Package Weight | 0.074g |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
| Green | Yes |
Download the complete datasheet for Diodes DMT6011LSS to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
