This device is a 60 V N-channel enhancement mode MOSFET in the PowerDI5060-8 package. It provides a maximum drain-source on-resistance of 4.4 mΩ at 10 V gate drive and 6.4 mΩ at 4.5 V, with continuous drain current rated up to 100 A at 25°C case temperature. The MOSFET is intended for high-frequency switching, synchronous rectification, and DC-DC converter applications, and it uses a wettable-flank package for improved optical inspection. It operates over a junction temperature range of -55°C to +150°C and is specified as RoHS compliant and halogen- and antimony-free.
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Diodes DMT64M2LPSW technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Drain-Source On-Resistance | 4.4 max @ VGS=10VmΩ |
| Drain-Source On-Resistance | 6.4 max @ VGS=4.5VmΩ |
| Gate-Source Voltage | ±20V |
| Pulsed Drain Current | 400A |
| Power Dissipation | 83.3W |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Input Capacitance | 2799pF |
| Total Gate Charge | 46.7 @ VGS=10VnC |
| Body Diode Reverse Recovery Time | 40.1ns |
| RoHS | Compliant |
| Environmental | Halogen- and Antimony-free Green device |
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