This device is a 60 V N-channel enhancement mode MOSFET in a V-DFN3333-8 package. It is specified for up to 77.8 A continuous drain current at a case temperature of 25°C, with maximum drain-source on-resistance of 4.8 mΩ at 10 V gate drive and 6.5 mΩ at 4.5 V gate drive. The MOSFET is intended for notebook battery power management, load switching, synchronous rectification, and DC-DC converter functions. It supports fast switching, includes ESD gate protection, and operates over a junction temperature range of -55°C to 150°C. The device is described as totally lead-free, fully RoHS compliant, and halogen- and antimony-free.
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Diodes DMT64M8LCG technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 77.8 at TC=25°CA |
| Continuous Drain Current | 62.2 at TC=70°CA |
| Pulsed Drain Current | 310A |
| Drain-Source On-Resistance | 4.8 max at VGS=10VmΩ |
| Drain-Source On-Resistance | 6.5 max at VGS=4.5VmΩ |
| Gate Threshold Voltage | 1.3 to 2.4V |
| Input Capacitance | 2664pF |
| Output Capacitance | 955pF |
| Reverse Transfer Capacitance | 75pF |
| Total Gate Charge | 47.5 at VGS=10VnC |
| Reverse Recovery Time | 41ns |
| Thermal Resistance Junction-to-Case | 2.5°C/W |
| Operating Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
| Antimony Free | Yes |
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