This N-channel enhancement mode MOSFET is rated for 60 V drain-source voltage and up to 17 A continuous drain current at 25°C. It is designed for high-frequency switching, synchronous rectification, and DC-DC converter applications with low on-resistance and fast switching performance. The device provides a maximum RDS(ON) of 5 mΩ at 10 V gate drive and 6.9 mΩ at 4.5 V gate drive. It is supplied in an SO-8 package, operates over a -55°C to +150°C junction temperature range, and is specified as totally lead-free, fully RoHS compliant, and halogen- and antimony-free.
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Diodes DMT64M8LSS technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 17.0A |
| Power Dissipation | 2.2W |
| Drain-Source On-Resistance Max @ VGS=10V | 5mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 6.9mΩ |
| Gate Threshold Voltage Max | 2.3V |
| Input Capacitance Typ | 2664pF |
| Output Capacitance Typ | 955pF |
| Reverse Transfer Capacitance Typ | 75pF |
| Total Gate Charge Typ @ VGS=4.5V | 26.1nC |
| Total Gate Charge Typ @ VGS=10V | 47.5nC |
| Thermal Resistance Junction-to-Case | 6.5°C/W |
| Operating and Storage Temperature Range | -55 to +150°C |
| RoHS | Fully RoHS Compliant |
| Lead-free | Totally Lead-Free |
| Halogen Free | Halogen and Antimony Free; Green Device |
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