This 60 V N-channel enhancement-mode MOSFET is designed for high-efficiency power-management applications including synchronous rectifiers and DC-DC converters. It provides a maximum drain current of 82 A at 25 °C case temperature and a maximum on-resistance of 6.2 mΩ at 10 V gate drive or 8.5 mΩ at 4.5 V gate drive. The device is supplied in a PowerDI5060-8 package with wettable flanks for improved optical inspection and an ESD-protected gate. It supports operation from -55 °C to +150 °C junction temperature and is specified as RoHS compliant and halogen- and antimony-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMT67M8LPSW datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMT67M8LPSW technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 82A |
| Continuous Drain Current (Tc=70°C) | 65.6A |
| Continuous Drain Current (Ta=25°C) | 17.3A |
| Continuous Drain Current (Ta=70°C) | 13.8A |
| Drain-Source On-Resistance @ Vgs=10V | 6.2 maxmΩ |
| Drain-Source On-Resistance @ Vgs=4.5V | 8.5 maxmΩ |
| Pulsed Drain Current | 320A |
| Avalanche Energy | 84.5mJ |
| Power Dissipation (Tc=25°C) | 62.5W |
| Thermal Resistance Junction-to-Case | 2°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Input Capacitance | 2130pF |
| Total Gate Charge @ Vgs=10V | 37.5nC |
| Reverse Recovery Time | 26.9ns |
| RoHS | Compliant |
| Halogen Free | Yes |
| Antimony Free | Yes |
| Green | Yes |
Download the complete datasheet for Diodes DMT67M8LPSW to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
